Minsk Research Institute of Radiomaterials
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
Protective device 2.5-12GHz
COUNTRY OF ORIGIN
BelarusIDENTIFIER
BO5497PUBLISHED
2022-09-01LAST UPDATE
2022-09-02DEADLINE
Linked profile in other language
Responsible
Natalia Mikhaseva
+ 375 33 333 9522
mniirm_m@mail.ru
+ 375 33 333 9522
mniirm_m@mail.ru
Summary
Minsk Research Institute of Radiomaterials offers consumers a 2.5-12GHz protection device to provide overload protection for microwave input receivers under a manufacturing agreement, and is looking for partners to conclude a distribution services agreement.
Description
Application area:
- Radar;
- Radio monitoring;
- Means for electronic suppression;
- Radio measuring equipment.
Specifications:
- Operating frequency range, GHz, not less than 2.5-12
- Transmission loss, dB, no more than 0.8
- Maximum continuous input power, W 1
- Maximum pulse input power, W 2.5
- Maximum continuous leakage power, W, not more than 0.03
- VSWR input / output, no more than 2.0.
The protective device is based on integral gallium arsenide Schottky diodes.
The protective device is implemented in a two-stage scheme.
The protective device is supplied integral or in a housing.
- Radar;
- Radio monitoring;
- Means for electronic suppression;
- Radio measuring equipment.
Specifications:
- Operating frequency range, GHz, not less than 2.5-12
- Transmission loss, dB, no more than 0.8
- Maximum continuous input power, W 1
- Maximum pulse input power, W 2.5
- Maximum continuous leakage power, W, not more than 0.03
- VSWR input / output, no more than 2.0.
The protective device is based on integral gallium arsenide Schottky diodes.
The protective device is implemented in a two-stage scheme.
The protective device is supplied integral or in a housing.
Advantages and Innovations
Distinctive features:
- Integral execution;
- Microstrip design;
- Wide frequency range.
- Integral execution;
- Microstrip design;
- Wide frequency range.
Stage of development
Already on the market
Funding source
State budged
Internal
Internal
IPR status
Exclusive rights
Secret know-how
Secret know-how
Sector group
Aeronautics, Space and Dual-Use Technologies
Nano and micro technologies
Nano and micro technologies
Client information
Type
R&D institution
Year established
1982
NACE keywords
C.26.11 - Manufacture of electronic components
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
Turnover (in EUR)
10-20M
Already engaged in transnational cooperation
Yes
Additional comments
The specialization of the institute includes the following main areas:
- development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
- development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
- production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
- development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
- development and production of medical equipment.
The research and production base of the institute includes special technological and research equipment designed to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows you to perform the operations of cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc. d.
The Institute has licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, the element base and, based on it, devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
- development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
- development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
- production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
- development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
- development and production of medical equipment.
The research and production base of the institute includes special technological and research equipment designed to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows you to perform the operations of cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc. d.
The Institute has licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, the element base and, based on it, devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
Languages spoken
English
Russian
Russian
Information about partnership
Type of partnership considered
Distribution services agreement
Manufacturing agreement
Manufacturing agreement
Type and role of partner sought
Consumers interested in purchasing 2.5-12GHz protective devices to provide overload protection for microwave input receivers under a manufacturing agreement.
Partners interested in purchasing 2.5-12GHz protective devices to provide overload protection for microwave input receivers under a distribution services agreement.
Partners interested in purchasing 2.5-12GHz protective devices to provide overload protection for microwave input receivers under a distribution services agreement.
Type and size of partner sought
> 500 MNE
> 500
251-500
SME 51-250
SME 11-50
SME <= 10
R&D Institution
University
> 500
251-500
SME 51-250
SME 11-50
SME <= 10
R&D Institution
University
Attachments
Views: 1492
Statistics since 01.09.2022 14:49:05
Statistics since 01.09.2022 14:49:05