Minsk Research Institute of Radiomaterials
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
Manufacture and supply of inductive proximity switches «VIB»
COUNTRY OF ORIGIN
BelarusIDENTIFIER
BO7337PUBLISHED
2023-10-03LAST UPDATE
2023-10-03DEADLINE
Linked profile in other language
Responsible
Natalia Mikhaseva
+ 375 33 333 9522
mniirm_m@mail.ru
+ 375 33 333 9522
mniirm_m@mail.ru
Summary
Minsk Research Institute of Radiomaterials of the National Academy of Sciences of Belarus offers consumers inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a manufacturing agreement and is looking for partners interested in a distribution services agreement.
Description
OJSC "Minsk Research Institute of Radiomaterials" of the National Academy of Sciences of Belarus manufactures inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L, designed for non-contact control of the position of moving parts of mechanisms at certain points of the trajectory and switching of electrical control and signaling circuits.
The principle of operation of the switch is based on the interaction of the electromagnetic field created by the sensitive element of the switch (the inductor of the LC generator) with an external metal object of influence. When an object of influence is introduced into the electromagnetic field zone of the coil, generation stops, the demodulated voltage drops and the threshold device is triggered, which leads to a change in the state of the switching element (output key).
The inductive proximity switch has the following design features:
* withstands vibration loads with a frequency of 50 Hz for 8 hours with a maximum acceleration of 5 g according to GOST 3940-2004;
* withstands impact loads in the amount of 10,000 impacts with a maximum acceleration of 10 g according to GOST 3940-2004.
The switches are characterized by:
* high reliability;
* unambiguous dependence of the output value on the input;
* stability of characteristics over time;
* small size and weight;
* the absence of a reverse effect on the object;
* tightness, IP 67.
Technical specifications:
Application area: industrial automation systems.
OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a manufacturing agreement;
* inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a distribution services agreement.
The list of other inductive proximity switches manufactured by MNIIRM available for order can be found here: M12 and M18 (in Russian) (files in .pdf format).
Links to the VIB-M12 and VIB-M18 on Minsk Research Institute of Radiomaterials site (in Russian).
The principle of operation of the switch is based on the interaction of the electromagnetic field created by the sensitive element of the switch (the inductor of the LC generator) with an external metal object of influence. When an object of influence is introduced into the electromagnetic field zone of the coil, generation stops, the demodulated voltage drops and the threshold device is triggered, which leads to a change in the state of the switching element (output key).
The inductive proximity switch has the following design features:
* withstands vibration loads with a frequency of 50 Hz for 8 hours with a maximum acceleration of 5 g according to GOST 3940-2004;
* withstands impact loads in the amount of 10,000 impacts with a maximum acceleration of 10 g according to GOST 3940-2004.
The switches are characterized by:
* high reliability;
* unambiguous dependence of the output value on the input;
* stability of characteristics over time;
* small size and weight;
* the absence of a reverse effect on the object;
* tightness, IP 67.
Technical specifications:
DC power supply voltage, V | 10-30 |
Permissible supply voltage ripple, % | ˂ 10 |
Load current, mA | ≤ 200 |
Comprehensive protection | Yes |
No-load current, mA | 15 |
Hysteresis, % | 3-15 |
Guaranteed actuation (switching) distance, Sa | 0-0,81 Sn |
Voltage drop on the open key, % | ˂ 2,5 |
Degree of protection | IP67 |
Application area: industrial automation systems.
OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a manufacturing agreement;
* inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a distribution services agreement.
The list of other inductive proximity switches manufactured by MNIIRM available for order can be found here: M12 and M18 (in Russian) (files in .pdf format).
Links to the VIB-M12 and VIB-M18 on Minsk Research Institute of Radiomaterials site (in Russian).
Advantages and Innovations
Stage of development
Already on the market
Funding source
State budged
Internal
Internal
IPR status
Exclusive rights
Secret know-how
Secret know-how
Sector group
Aeronautics, Space and Dual-Use Technologies
Intelligent Energy
Nano and micro technologies
Intelligent Energy
Nano and micro technologies
Client information
Type
R&D institution
Year established
1982
NACE keywords
C.26.11 - Manufacture of electronic components
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
Turnover (in EUR)
10-20M
Already engaged in transnational cooperation
Yes
Additional comments
The specialization of the institute includes the following main areas:
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.
The research and production base of the institute includes special technological and research equipment designed to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows you to perform the operations of cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.d.
The Institute has licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, the element base and, based on it, devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.
The research and production base of the institute includes special technological and research equipment designed to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows you to perform the operations of cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.d.
The Institute has licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, the element base and, based on it, devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
Languages spoken
English
Russian
Russian
Information about partnership
Type of partnership considered
Distribution services agreement
Manufacturing agreement
Manufacturing agreement
Type and role of partner sought
Consumers interested in purchasing inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a manufacturing agreement.
Partners interested in purchasing inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a distribution services agreement.
Partners interested in purchasing inductive proximity switches VIB-M12V4-PO-K3-2-51/38-L and VIB-M18V5-PO-K3-2-59/45-L under a distribution services agreement.
Type and size of partner sought
> 500
251-500
SME 51-250
SME 11-50
SME <= 10
R&D Institution
University
251-500
SME 51-250
SME 11-50
SME <= 10
R&D Institution
University
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Statistics since 03.10.2023 13:22:28