Minsk Research Institute of Radiomaterials
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
Manufacture and supply of monolithic microwave integrated circuits (MMICs) power amplifiers
COUNTRY OF ORIGIN
BelarusIDENTIFIER
BO7657PUBLISHED
2024-06-27LAST UPDATE
2024-06-27DEADLINE
Linked profile in other language
Responsible
Natalia Mikhaseva
+ 375 33 333 9522
mniirm_m@mail.ru
+ 375 33 333 9522
mniirm_m@mail.ru
Summary
Minsk Research Institute of Radiomaterials of the National Academy of Sciences of Belarus offers consumers MMICs power amplifiers under a manufacturing agreement and is looking for partners interested in a distribution services agreement.
Description
OJSC "Minsk Research Institute of Radiomaterials" of the National Academy of Sciences of Belarus manufactures MMICs power amplifiers designed to enhance the power of transmitting sealed microwave modules.
The amplifiers is made in monolithic technology on the structures of gallium arsenide. The active element of the amplifier is a field-effect transistor with Schottky gate, the length of which is 0.2(0.25 and 0.5) µm. The grounding points are brought to the reverse side of the substrate through holes in the gallium arsenide crystal, which makes it possible to significantly reduce parasitic inductances and obtain a wide microwave bandwidth with a high gain.
MMICs power amplifiers are characterized by:
* integral performance;
* microstrip construction;
* wide frequency range;
* high efficiency.
Technical specifications:
Areas of application:
* radar;
* radiomonitoring;
* means RES;
* radio-measuring equipment.
OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* MMICs power amplifiers under a manufacturing agreement;
* MMICs power amplifiers under a distribution services agreement.
MMICs power apmlifiers PA 8 1107, PA 9-10, PM 446, PM 560-1, PM 560-2, PA 30-36, PM 496 at the manufacturer's website (in Russian).
The amplifiers is made in monolithic technology on the structures of gallium arsenide. The active element of the amplifier is a field-effect transistor with Schottky gate, the length of which is 0.2(0.25 and 0.5) µm. The grounding points are brought to the reverse side of the substrate through holes in the gallium arsenide crystal, which makes it possible to significantly reduce parasitic inductances and obtain a wide microwave bandwidth with a high gain.
MMICs power amplifiers are characterized by:
* integral performance;
* microstrip construction;
* wide frequency range;
* high efficiency.
Technical specifications:
Operating frequency range, GHz | |||||||
Gain, dB, over
| |||||||
Unevenness of the gain, Db, max | |||||||
Output power dBm, over
| |||||||
VSWR input/output | |||||||
Gain adjustment, dB |
Areas of application:
* radar;
* radiomonitoring;
* means RES;
* radio-measuring equipment.
OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* MMICs power amplifiers under a manufacturing agreement;
* MMICs power amplifiers under a distribution services agreement.
MMICs power apmlifiers PA 8 1107, PA 9-10, PM 446, PM 560-1, PM 560-2, PA 30-36, PM 496 at the manufacturer's website (in Russian).
Advantages and Innovations
MMICs power amplifiers is similar to products of companies:
-«MACOM» (USA);
-«MicroWave Technology, Inc.» (USA);
-«Miller MMIC Inc.» (USA);
-«Sainty-tech Communications Limited.» (China).
-«MACOM» (USA);
-«MicroWave Technology, Inc.» (USA);
-«Miller MMIC Inc.» (USA);
-«Sainty-tech Communications Limited.» (China).
Stage of development
Already on the market
Funding source
State budged
Internal
Internal
IPR status
Exclusive rights
Secret know-how
Secret know-how
Sector group
Aeronautics, Space and Dual-Use Technologies
ICT Industry & Services
Nano and micro technologies
ICT Industry & Services
Nano and micro technologies
Client information
Type
R&D institution
Year established
1982
NACE keywords
C.27.90 - Manufacture of other electrical equipment
C.32.99 - Other manufacturing n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
C.32.99 - Other manufacturing n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
Turnover (in EUR)
10-20M
Already engaged in transnational cooperation
Yes
Additional comments
The specialization of the institute includes the following main areas:
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.
The research and production base of the institute includes dedicated equipment which allows to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.
The Institute has a licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, components and devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.
The research and production base of the institute includes dedicated equipment which allows to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.
The Institute has a licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, components and devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
Languages spoken
English
Russian
Russian
Information about partnership
Type of partnership considered
Distribution services agreement
Manufacturing agreement
Manufacturing agreement
Type and role of partner sought
Consumers interested in purchasing MMICs power amplifiers under a manufacturing agreement.
Partners interested in purchasing MMICs power amplifiers under a distribution service agreement.
Partners interested in purchasing MMICs power amplifiers under a distribution service agreement.
Type and size of partner sought
> 500
251-500
SME 51-250
SME 11-50
SME <= 10
R&D Institution
University
Sole proprietor
251-500
SME 51-250
SME 11-50
SME <= 10
R&D Institution
University
Sole proprietor
Attachments
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Статистика ведется с 27.06.2024 16:10:14
Статистика ведется с 27.06.2024 16:10:14