Minsk Research Institute of Radiomaterials of the National Academy of Sciences of Belarus offers consumers power amplifiers «PA 1» and «PA 2» under a manufacturing agreement and is looking for partners interested in a distribution services agreement.

OJSC "Minsk Research Institute of Radiomaterials" of the National Academy of Sciences of Belarus manufactures power amplifiers «PA 1» and «PA 2» designed to modernize the transmission paths of radar stations.

The amplifiers provide amplification of modulated and continuous signals with an output power of at least 1W in the ranges of 2,5..3,2; 3,1..3,6 GHz.

Technical specifications:

Model	PA 1	PA 2
Frequency range, GHz	2,5..3,2	3,1..3,6
Gain, dB	27..41	27..41
Uneven coefficient of gain, dB	± 1,5	± 1,5
Noise figure dB, dB	3,0	3,0
Maximum allowable power of radio pulses input, W	100	100
Duration of radio pulses, mks	12	12
Duty cycle of radio pulses	100	100
Output power at gain compression at 1 dB, mW	50	50
Standing wave ratio of voltage input/output, max	2,0	2,0
Supply voltage range of positive polarity, V	9..30	9..30
The maximum allowed value of current consumption, mA	250	250
Weight, kg	0,7	0,7
Time to failure, mm, min	10000	10000
Dimensions, mm	85×70×21	85×70×21

Areas of use:
* radar systems;
* communication systems.

OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* power amplifiers «PA 1», «PA 2» under a manufacturing agreement;
* power amplifiers «PA 1», «PA 2» under a distribution services agreement.

Link to the product on Minsk Research Institute of Radiomaterials site.

Import substitution of power amplifiers:
UM 2 by «Elsis» (Russian Federation);
PE15A5003 by «Pasternack Enterprises Inc» (USA);
MITEQ by «Narda-MITEQ» (USA).

The specialization of the institute includes the following main areas:
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.

The research and production base of the institute includes dedicated equipment which allows to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.

The Institute has a licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.

As part of the specialization, the development of technologies, components and devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.

Consumers interested in purchasing power amplifiers «PA 1», «PA 2» under a manufacturing agreement.

Partners interested in purchasing power amplifiers «PA 1», «PA 2» under a distribution service agreement.