B.I.Stepanov Institute of Physics of the National Academy of Sciences of Belarus offers consumers AlN/AlGaN/GaN nitride heterostructures on sapphire and silicon carbide substrates under a manufacturing agreement and is looking for partners interested in a distribution services agreement.

B.I.Stepanov Institute of Physics of the National Academy of Sciences of Belarus developed a technology for molecular-beam epitaxy of AlN/AlGaN/GaN nitride heterostructures.

Gallium nitride (GaN)possesses a number of advantages over traditional Si and GaAs, such as:
* ability to work at high temperatures;
* resistance to radiation;
* higher efficiency of devices;
* high density and mobility of electron gas in heterostructures AlGaN/GaN allows one to produce on their basis powerful microwave and power transistors.

The technology for AlN layer growth in step-flow mode is developed, which provides a roughness of ~ 0.7 nm:


The developed growth technology made it possible to create transistor heterostructures with twodimensional electron gas on sapphire and silicon carbide substrates:


The grown AlGaN layers show stimulated emission in the UV-region of the spectrum with relatively low threshold values:


Application areas:
* communication, sensor and micromechanical technologies;
* in inverters, power supplies, drivers of new generation electrical devices with improved mass-dimensional characteristics, working in extreme conditions, including space;
* for creating microwave amplifiers and microwave paths of communication systems;
* in active phased antenna arrays (AESA).

B.I.Stepanov Institute of Physics offers partners AlN/AlGaN/GaN nitride heterostructures on sapphire and silicon carbide substrates under a manufacturing agreement.

Catalogue of Developments & Services of «B.I. Stepanov Institute of Physics» 2022, pp.52-53.

Link on the B.I.Stepanov Institute of Physics site (in Russian).

AlN/AlGaN/GaN nitride heterostructures are not inferior in their characteristics to the best global analogues of the companies:
«SweGaN AB» (Sweden);
«MSE Supplies LLC» (USA);
«IVWorks Co., Ltd.» (South Korea);
«Xiamen Powerway Advanced Material Co., Ltd» (China), etc.

The directions of scientific research and development of the B.I.Stepanov Institute of Physics are currently:
* Laser physics, development and creation of laser systems and technologies for medicine, ecology, industry, metrology and information protection;
* Physical and nonlinear optics, the disclosure and use of the patterns of propagation of high-power laser radiation in various media;
* Optical spectroscopy, development and application of methods and instruments for studying the properties and structure of various materials, including biotissues;
* Nanooptics and Nanomaterials;
* Quantum optics, investigation of quantum properties of electromagnetic radiation in computer science and cryptography;
* Investigation of the structure and properties of atomic-molecular structures and the creation of new optical materials, systems, instruments and technologies on this base;
* Plasma physics and plasma technologies: investigation of the plasma interaction with fields and matter; development and application of methods for plasma diagnostics, development of technological applications of gas-discharge and laser plasma
* Micro- and optoelectronics: LED technology, solar cells, microwave technology, microelectromechanical and sensor systems and devices;
* Physics of Fundamental Interactions and Nuclear Reactions - Investigating the Structure of the Microcosm and the Universe.

The B.I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus has scientific contacts with many countries. At present, more than 50 agreements on scientific and technical cooperation have been signed with organizations from 15 countries.

The Institute develops, manufactures and supplies laser and optical instruments for various purposes, as well as innovative components for laser technology, to many countries of the world (Russia, China, Germany, France, the United States, Saudi Arabia, India, etc.).

Consumers interested in purchasing AlN/AlGaN/GaN nitride heterostructures on sapphire and silicon carbide substrates under a manufacturing agreement.

Partners interested in purchasing AlN/AlGaN/GaN nitride heterostructures on sapphire and silicon carbide substrates under a distribution services agreement.