Minsk Research Institute of Radiomaterials
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
https://mniirm.by/
220024 Minsk, Lieutenant Kizhevatov str. 86-2
Manufacture and supply of low-noise amplifiers with a protective devices «LNA PD1» and «LNA PD2»
COUNTRY OF ORIGIN
IDENTIFIER
BO7546PUBLISHED
2024-02-20LAST UPDATE
2024-02-20DEADLINE
Linked profile in other language
Responsible
Natalia Mikhaseva
+ 375 33 333 9522
mniirm_m@mail.ru
+ 375 33 333 9522
mniirm_m@mail.ru
Summary
Minsk Research Institute of Radiomaterials of the National Academy of Sciences of Belarus offers consumers low-noise amplifiers with a protective devices «LNA PD1» and «LNA PD2» under a manufacturing agreement and is looking for partners interested in a distribution services agreement.
Description
OJSC "Minsk Research Institute of Radiomaterials" of the National Academy of Sciences of Belarus manufactures low-noise amplifiers with a protective devices «LNA PD1» and «LNA PD2» designed to modernize the input blocks of radar stations.
Low-noise amplifiers with protective devices provide amplification of weak microwave signals in the input circuits of receiving devices with a noise factor of no more than 3.0 dB (when exposed to radio pulses with a power of up to 1000 watts in the frequency range of 2.5-3.6 GHz).
Low-noise amplifiers are characterized by:
* high sensitivity;
* noise reduction;
* Increased detection range;
* improved resolution;
* improved receiver performance;
* increasing the communication range;
* minimizing distortion;
* improved measurement accuracy;
* improved performance in interference conditions.
Technical specifications:
Areas of use: communication and telecommunication systems.
OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* low-noise amplifiers with a protective devices «LNA PD1» and «LNA PD2» under a manufacturing agreement;
* low-noise amplifiers with a protective devices «LNA PD1» and «LNA PD2» under a distribution services agreement.
Link to the product on Minsk Research Institute of Radiomaterials site.
Low-noise amplifiers with protective devices provide amplification of weak microwave signals in the input circuits of receiving devices with a noise factor of no more than 3.0 dB (when exposed to radio pulses with a power of up to 1000 watts in the frequency range of 2.5-3.6 GHz).
Low-noise amplifiers are characterized by:
* high sensitivity;
* noise reduction;
* Increased detection range;
* improved resolution;
* improved receiver performance;
* increasing the communication range;
* minimizing distortion;
* improved measurement accuracy;
* improved performance in interference conditions.
Technical specifications:
Parameter | «LNA PD1» | «LNA PD2» |
Frequency range, GHz | 2,5..3,2 | 3,1..3,6 |
Gain, dB | 26..33 | 26..33 |
Uneven coefficient of amplification, dB, max | ± 1,5 | ± 1,5 |
Noise factor, dB, max | 3,0 | 3,0 |
Maximum allowable power of radio pulses at the input, W, max | 1000 | 1000 |
Duration of radio , μs, max | 10 | 10 |
Duty cycle of radio pulses , over | 1000 | 1000 |
Output power at compression gain by 1 dB, mW, over | 10 | 10 |
Voltage standing wave radio I/O, max | 2,0 | 2,0 |
Supply voltage range of positive polarity, V | 9..30 | 9..30 |
Maximum allowable value of the current, mA, max | 150 | 150 |
Weight, kg | 0,8 | 0,8 |
Time between failures, hrs , over | 10000 | 10000 |
Dimensions, mm | 185×72×30 | 185×72×30 |
Areas of use: communication and telecommunication systems.
OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* low-noise amplifiers with a protective devices «LNA PD1» and «LNA PD2» under a manufacturing agreement;
* low-noise amplifiers with a protective devices «LNA PD1» and «LNA PD2» under a distribution services agreement.
Link to the product on Minsk Research Institute of Radiomaterials site.
Advantages and Innovations
Low-noise amplifiers with a protective devices is similar to products:
ELU-Z-30 by «Elsys» (Ukraine);
LNA-30-02000400-10-15P by «Narda-MITEQ» (USA);
PLNA-2G4G-40-1DB-12DBM-SFF by «Quantic PMI(Planar Monolithics)» (USA).
ELU-Z-30 by «Elsys» (Ukraine);
LNA-30-02000400-10-15P by «Narda-MITEQ» (USA);
PLNA-2G4G-40-1DB-12DBM-SFF by «Quantic PMI(Planar Monolithics)» (USA).
Stage of development
Already on the market
Funding source
State budged
Internal
Internal
IPR status
Exclusive rights
Secret know-how
Secret know-how
Sector group
Aeronautics, Space and Dual-Use Technologies
ICT Industry & Services
Maritime Industry and Services
Mobility
ICT Industry & Services
Maritime Industry and Services
Mobility
Organization information
Type
R&D institution
Year established
1982
NACE keywords
C.27.90 - Manufacture of other electrical equipment
C.32.99 - Other manufacturing n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
C.32.99 - Other manufacturing n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
Turnover (in EUR)
10-20M
Already engaged in transnational cooperation
Yes
Additional comments
The specialization of the institute includes the following main areas:
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.
The research and production base of the institute includes dedicated equipment which allows to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.
The Institute has a licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, components and devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.
The research and production base of the institute includes dedicated equipment which allows to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.
The Institute has a licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.
As part of the specialization, the development of technologies, components and devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
Languages spoken
English
Russian
Russian
Information about partnership
Type of partnership considered
Distribution services agreement
Manufacturing agreement
Manufacturing agreement
Type and role of partner sought
Consumers interested in purchasing low-noise amplifiers with a protective devices «LNA PD1»,«LNA PD2» under a manufacturing agreement.
Partners interested in purchasing low-noise amplifiers with a protective devices «LNA PD1»,«LNA PD2» under a distribution service agreement.
Partners interested in purchasing low-noise amplifiers with a protective devices «LNA PD1»,«LNA PD2» under a distribution service agreement.
Type and size of partner sought
> 500
251-500
SME 51-250
SME 11-50
SME <= 10
Sole proprietor
251-500
SME 51-250
SME 11-50
SME <= 10
Sole proprietor
Attachments
Views: 621
Statistics since 20.02.2024 09:55:57
Statistics since 20.02.2024 09:55:57